0000000000741381
AUTHOR
S. Olivier
Ge quantum well plasmon-enhanced quantum confined Stark effect modulator
ABSTRACTWe theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/…
Low-Power consumption Franz-Keldysh effect plasmonic modulator
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.
A CMOS-compatible Franz-Keldysh effect plasmonic modulator
We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at −3V. It features a power consumption as low as 20 fJ/bit.