6533b82ffe1ef96bd1294808
RESEARCH PRODUCT
Ge quantum well plasmon-enhanced quantum confined Stark effect modulator
R. Espiau De LamaestreJ.-c. WeeberLaurent VivienDaniel ChrastinaPapichaya ChaisakulJacopo FrigerioGiovanni IsellaNicolas AbadiaT. BernardinDelphine Marris-moriniS. Oliviersubject
optical propertiesMaterials scienceoptical; optical properties; optoelectronic; Materials Science (all); Condensed Matter Physics; Mechanical Engineering; Mechanics of MaterialsSolid-state physicsCondensed matter physicsMechanical EngineeringQuantum-confined Stark effectPhysics::OpticsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectPolarization (waves)Condensed Matter PhysicsQuantum technologyOptical modulatorQuantum dotMechanics of MaterialsopticalMaterials Science (all)optoelectronicQuantum wellPlasmondescription
ABSTRACTWe theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2014-01-01 |