0000000000639981
AUTHOR
R. Espiau De Lamaestre
Momentum-space spectroscopy for advanced analysis of dielectric-loaded surface plasmon polariton coupled and bent waveguides
We perform advanced radiation leakage microscopy of routing dielectric-loaded plasmonic waveguiding structures. By direct plane imaging and momentum-space spectroscopy, we analyze the energy transfer between coupled waveguides as a function of gap distance and reveal the momentum distribution of curved geometries. Specifically, we observed a clear degeneracy lift of the effective indices for strongly interacting waveguides in agreement with coupled-mode theory. We use momentum-space representations to discuss the effect of curvature on dielectric-loaded waveguides. The experimental images are successfully reproduced by a numerical and an analytical model of the mode propagating in a curved …
Ge quantum well plasmon-enhanced quantum confined Stark effect modulator
ABSTRACTWe theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/…
Low-Power consumption Franz-Keldysh effect plasmonic modulator
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.