0000000000773970

AUTHOR

Pier Giorgio Fallica

showing 4 related works from this author

Photonic-crystal silicon-nanocluster light-emitting device

2006

We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integ…

Amorphous siliconMaterials sciencePhysics and Astronomy (miscellaneous)Siliconbusiness.industryHybrid silicon laserPhotonic integrated circuitchemistry.chemical_elementNanotechnologySettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoclusterslaw.inventionchemistry.chemical_compoundNANOCRYSTALSchemistrylawELECTROLUMINESCENCEOptoelectronicslight-emitting devicePhotolithographyPhotonicsbusinessPhotonic crystal
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Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime

2013

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observ…

PhotomultiplierMaterials scienceSiliconbusiness.industrychemistry.chemical_elementOptical powerSubstrate (electronics)Settore ING-INF/01 - ElettronicaSiPM Silicon Photomultiplier SPAD Photodiode Quantum Detector Continuous WaveResponsivityWavelengthOpticsSilicon photomultiplierchemistryOptoelectronicsContinuous wavebusiness
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Fiberless, Multi-Channel fNIRS-EEG System Based on Silicon Photomultipliers: Towards Sensitive and Ecological Mapping of Brain Activity and Neurovasc…

2020

Portable neuroimaging technologies can be employed for long-term monitoring of neurophysiological and neuropathological states. Functional Near-Infrared Spectroscopy (fNIRS) and Electroencephalography (EEG) are highly suited for such a purpose. Their multimodal integration allows the evaluation of hemodynamic and electrical brain activity together with neurovascular coupling. An innovative fNIRS-EEG system is here presented. The system integrated a novel continuous-wave fNIRS component and a modified commercial EEG device. fNIRS probing relied on fiberless technology based on light emitting diodes and silicon photomultipliers (SiPMs). SiPMs are sensitive semiconductor detectors, whose large…

clinical brain monitoringBrain activity and meditationComputer scienceneurovascular couplingElectroencephalographylcsh:Chemical technologySettore ING-INF/01 - Elettronica01 natural sciencesBiochemistryArticleAnalytical Chemistry010309 optics03 medical and health sciences0302 clinical medicineSilicon photomultiplierNeuroimagingInterference (communication)Component (UML)0103 physical sciencesmedicineHumanslcsh:TP1-1185electroencephalography (EEG)Electrical and Electronic EngineeringSpectroscopyInstrumentationBrain MappingSpectroscopy Near-Infraredmedicine.diagnostic_testEcologyHemodynamicsmultimodal neuroimagingBrainMultimodal neuroimagingElectroencephalographyNeurophysiologyAtomic and Molecular Physics and Opticsmedicine.anatomical_structureFPGA Brain Oxygenation Map clinical brain monitoringScalpSettore ING-INF/06 - Bioingegneria Elettronica E Informaticasilicon photomultipliers.Neurovascular couplingsilicon photomultipliers030217 neurology & neurosurgeryfunctional near infrared spectroscopy (fNIRS)Sensors
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Electroluminescence and transport properties in amorphous silicon nanostructures

2006

We report the results of a detailed study on the structural, electrical and optical properties of light emitting devices based on amorphous Si nanostructures. Amorphous nanostructures may constitute an interesting system for the monolithic integration of optical and electrical functions in Si ULSI technology. In fact, they exhibit an intense room temperature electroluminescence (EL), with the advantage of being formed at a temperature of 900 °C, while at least 1100 °C is needed for the formation of Si nanocrystals. Optical and electrical properties of amorphous Si nanocluster devices have been studied in the temperature range between 30 and 300 K. The EL is seen to have a bell-shaped trend …

Amorphous siliconVISIBLE ELECTROLUMINESCENCEMaterials sciencePhysics and Astronomy (miscellaneous)nanostructures; silicon; elecroluminescenceExcitonBioengineeringElectronQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundnanostructuresGeneral Materials ScienceSI-RICH SIO2Electrical and Electronic EngineeringLIGHT-EMITTING DEVICESEngineering (miscellaneous)business.industryMechanical EngineeringsiliconGeneral ChemistryAtmospheric temperature rangeAmorphous solidCHEMICAL-VAPOR-DEPOSITIONelecroluminescenceNanocrystalchemistryMechanics of MaterialsOptoelectronicsMaterials Science (all)businessLuminescenceNanotechnology
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