0000000000789966
AUTHOR
Aleksandrs Zaslavskis
FTIR Analysis of Electron Irradiated Single and Multilayer Si<sub>3</sub>N<sub>4</sub> Coatings
Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal inte…
Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon
Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investi…