6533b832fe1ef96bd129ac85

RESEARCH PRODUCT

FTIR Analysis of Electron Irradiated Single and Multilayer Si<sub>3</sub>N<sub>4</sub> Coatings

Valentina KinerteMarina RomanovaBronislavs LescinskisL. AvotinaJurijs DehtjarsGennady EnichekE. PajusteAleksandrs ZaslavskisArtūrs ZariņšGunta ĶIzāne

subject

010302 applied physicsMaterials scienceMechanical Engineering02 engineering and technologyElectron021001 nanoscience & nanotechnology01 natural sciencesMechanics of Materials0103 physical sciencesGeneral Materials ScienceIrradiationFourier transform infrared spectroscopy0210 nano-technologyNuclear chemistry

description

Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal intensities and position in spectra, showing to good radiation stability of the single and multi layered Si3N4 nanolayers.

https://doi.org/10.4028/www.scientific.net/kem.788.96