0000000000297337
AUTHOR
Marina Romanova
Interface of Silicon Nitride Nanolayers with Oxygen Deficiency
Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.
Radiation resistance of nanolayered silicon nitride capacitors
Abstract Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation…
Extraction–Pyrolytic Method for TiO2 Polymorphs Production
The authors thank V. Kuzovkov, A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as the Center of Excellence is supported through the Framework Program for European universities Union Horizon 2020, H2020-WIDESPREAD-01–2016–2017-TeamingPhase2 under Grant Agreement No. 739508, CAMART2 project.
A multi-country test of brief reappraisal interventions on emotions during the COVID-19 pandemic
© The Author(s), under exclusive licence to Springer Nature Limited 2021, corrected publication 2022
Effect of gamma radiation on thermostimulated exoelectron emission from Gd2O3 films
Abstract The effect of gamma irradiation on Gd2O3 films was studied using the thermostimulated exoelectron emission (TSEE) technique. The films were deposited on a glass and Si/SiO2 substrates using an extraction-pyrolytic method. Crystalline structure, chemical composition, film thickness and surface morphology were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films were irradiated by 10 MeV gamma photons and TSEE was measured from the irradiated films. It was found that gamma irradiation decreases TSEE intensity and the area below TSEE spectral curves. A linear correlati…
PBS Nanodots for Ultraviolet Radiation Nanosensor
PbS nanodots embedded in a zirconium oxide nanofilm were explored as possible ultraviolet (UV) sensors for nanodosimetry purposes. The nanodots were excited by ultraviolet photons to get emission of weak electrons. The emitted charge correlated to UV exposure indicates that PbS nanodots have potential for use as UV sensors for nanodosimetry.
FTIR Analysis of Electron Irradiated Single and Multilayer Si<sub>3</sub>N<sub>4</sub> Coatings
Silicon nitride (Si3N4) due to its good mechanical and electrical properties is a promising material for wide range of applications, including exploitation under action of ionizing radiation. For estimating the changes of chemical bonds in silicon nitride nanolayers under action of ionizing radiation single and multi-layer silicon nitride nanolayered coatings on prepared Si subtrate were investigated by means of Fourier transform infrared spectrometry. Three main groups of signals were identified in both types of nanolayers, at 510 and 820 cm-1 and group of broad signals at 1000-1200 cm-1. Irradiation with accelerated electrons up to absorbed doses 36 MGy causes minor changes of signal inte…
Inorganic Nanoparticle as a Carrier for Hepatitis B Viral Capsids
Virus like particles (VLP) are used to transport immune response-modulating agents to target cells to treat them. In order to deliver a high concentration of VLP to the cell, a number of VLP can be attached to a nanoparticle to be used as a nanolorry. In this study, SiO2 nanoparticles were attached to Hepatitis B VLP. Spectrophotometry measurements, electron, and fluorescent microscopy evidence showed that the SiO2 – Hepatitis B VLP complexes were formed.
Role of precursor composition in the polymorph transformations, morphology control and ferromagnetic properties of nanosized TiO$_2$
Pure phase and mixed phase TiO$_2$ nanoparticles have been produced using a pyrolytic method from a non-aqueous carboxylate precursor. The precursor was prepared by a multiphase cation exchange using pentanoic acid (C$_4$H$_9$COOH). The thermal stability, polymorph content, morphology, size distribution and surface region of the produced nanoparticles were studied by TGA/DSC, XRD, FTIR and TEM. High quality monodisperse nanoparticles have been produced in the size range from 7 to 27 nm. The nanoparticles showed room temperature ferromagnetism revealed by VSM within bound polaron model. The carboxylate precursor is a good alternative to standard sol-gel to produce nanoparticles free from imp…
Surface Morphology of Single and Multi-Layer Silicon Nitride Dielectric Nano-Coatings on Silicon Dioxide and Polycrystalline Silicon
Silicon nitride (Si3N4) in a form of single and multi-layer nanofilms is proposed to be used as a dielectric layer in nanocapacitors for operation in harsh environmental conditions. Characterization of surface morphology, roughness and chemical bonds of the Si3N4 coatings has an important role in production process as the surface morphology affects the contact surface with other components of the produced device. Si3N4 was synthesized by using low pressure chemical vapour deposition method and depositing single and multi-layer (3 – 5 layers) nanofilms on SiO2 and polycrystalline silicon (PolySi). The total thickness of the synthesized nanofilms was 20 – 60 nm. Surface morphology was investi…
PbS Nanodots Embedded in ZrO2 Thin Films for Ultraviolet Radiation Dosimetry
PbS nanodots embedded in ZrO2 thin film matrix (ZrO2:PbS films) were investigated for UV radiation dosimetry purposes. ZrO2:PbS films were UV irradiated using wavelengths 250 - 400 nm. Photoelectron emission spectra of ZrO2:PbS films were recorded and band structure of the films was calculated. It was found that density of localized states increased with increase in concentration of PbS nanodots which allowed to suggest that PbS nanodots are responsible for creation of localized states. Number of localized states decreased after UV irradiation. The linear correlation between number of localized states and time of UV exposure was observed. Observed changes in band structure of ZrO2:PbS films…
PbS Nanodots For Ultraviolet Radiation Dosimetry
Lead sulfide (PbS) nanodots in Zirconia (ZrO2) thin film matrix (ZrO2:PbS films) were investigated for UV radiation dosimetry purposes. Samples were fabricated using sol-gel technique. ZrO2:PbS films were irradiated with UV light with wavelengths 250 – 400 nm during 50 minutes. Photoelectron emission spectra of ZrO2:PbS films were recorded and band structure for nonradiated and UV irradiated samples was calculated. It was found that quantity of localized states decreased after UV irradiation while density of localized states was dependent on concentration of PbS nanodots. The observed changes in band structure of ZrO2:PbS films after UV irradiation suggest that the films may be considered a…