6533b7d7fe1ef96bd1268345

RESEARCH PRODUCT

Interface of Silicon Nitride Nanolayers with Oxygen Deficiency

Hermanis SorokinsL. AvotinaAleksandr ZaslavskiYuri DekhtyarEvgeny ShulzingerMarina RomanovaBen SchmidtAleksandr VilkenGennady Enichek

subject

Materials scienceSiliconAnalytical chemistrychemistry.chemical_elementChemical vapor depositionDielectricOxygenCapacitancelaw.inventionCapacitorchemistry.chemical_compoundchemistrySilicon nitridelawLimiting oxygen concentration

description

Multilayer Si 3 N 4 consisting of Si 3 N 4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si 3 N 4 , the multilayer Si 3 N 4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si 3 N 4 dielectric.

yearjournalcountryeditionlanguage
2018-10-012018 16th Biennial Baltic Electronics Conference (BEC)
https://doi.org/10.1109/bec.2018.8600964