6533b825fe1ef96bd1283189

RESEARCH PRODUCT

Effect of gamma radiation on thermostimulated exoelectron emission from Gd2O3 films

Vera SergaStanislav CichonMarina RomanovaYuri DekhtyarAija KruminaLadislav FeketeDaniels JevdokimovsRegina BurveKristaps Palskis

subject

DiffractionNuclear and High Energy PhysicsRange (particle radiation)Materials scienceX-ray photoelectron spectroscopyScanning electron microscopeAnalytical chemistryIrradiationElectronRadiationInstrumentationExoelectron emission

description

Abstract The effect of gamma irradiation on Gd2O3 films was studied using the thermostimulated exoelectron emission (TSEE) technique. The films were deposited on a glass and Si/SiO2 substrates using an extraction-pyrolytic method. Crystalline structure, chemical composition, film thickness and surface morphology were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films were irradiated by 10 MeV gamma photons and TSEE was measured from the irradiated films. It was found that gamma irradiation decreases TSEE intensity and the area below TSEE spectral curves. A linear correlation between the relative decrease in the area and the delivered dose was observed in a dose range of 0–10 Gy. These findings suggest that gamma radiation might decrease the density of trapped electrons present in the as-grown Gd2O3 films or create competing electron traps that inhibit TSEE from the films.

https://doi.org/10.1016/j.nimb.2019.11.016