0000000000589962
AUTHOR
Ladislav Fekete
Effect of gamma radiation on thermostimulated exoelectron emission from Gd2O3 films
Abstract The effect of gamma irradiation on Gd2O3 films was studied using the thermostimulated exoelectron emission (TSEE) technique. The films were deposited on a glass and Si/SiO2 substrates using an extraction-pyrolytic method. Crystalline structure, chemical composition, film thickness and surface morphology were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films were irradiated by 10 MeV gamma photons and TSEE was measured from the irradiated films. It was found that gamma irradiation decreases TSEE intensity and the area below TSEE spectral curves. A linear correlati…
Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride
The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of h…