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RESEARCH PRODUCT
Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride
Alejandro Molina-sánchezJuan F. Sánchez-royoVincent MortetMarie KreĉmarováRodolfo Canet-albiachLadislav FeketePetr AshcheulovDaniel Andres-penaresJuan P. Martínez-pastorIvan Gregorasubject
Materials sciencePhononGeneral Chemical Engineering02 engineering and technologySubstrate (electronics)010402 general chemistry01 natural sciencesArticlelcsh:ChemistryCondensed Matter::Materials Sciencesymbols.namesakeAb initio quantum chemistry methodsMonolayerGeneral Materials Scienceoptical contrasttwo-dimensional materialsSpectroscopybusiness.industry021001 nanoscience & nanotechnologyHexagonal boron nitride0104 chemical sciencesSemiconductorlcsh:QD1-999Raman spectroscopysymbolsOptoelectronics0210 nano-technologyRaman spectroscopybusinessLayer (electronics)description
The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of hBN monolayers in the few-layer thickness range. We also used bandpass filters (500&ndash
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-07-01 | Nanomaterials |