0000000000888419
AUTHOR
Gaetano Randazzo
High Resolution Time Domain Reflectometry for Dielectric State Monitoring in High Voltage Cables
A high resolution Time Domain Reflectometry system has been designed in order to investigate the possibility of measuring with good accuracy the dielectric properties of high voltage cables insulator materials by means of Time-of-Flight measures. The system employs a dedicated Time-To-Digital Converter in order to achieve a time resolution of 90 ps. By exploiting averaging techniques the resolution has been further increased. Experimental results showed the possibility of measuring the dielectric constant with a resolution of 0.03%.
Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors
Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices.