6533b85cfe1ef96bd12bc03b

RESEARCH PRODUCT

Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors

Fulvio CarusoMaurizio Salvatore Di BellaGaetano RandazzoClaudio CaliRoberto MacalusoFrancesco Di FrancoMauro MoscaMonica SantamariaFrancesco Di Quarto

subject

Organic Field-Effect Transistor (OFET)Materials scienceAnodizingbusiness.industryAlloyanodisizingengineering.materialTi:Si alloySettore ING-INF/01 - ElettronicaElectronic Optical and Magnetic MaterialsSettore ING-IND/23 - Chimica Fisica ApplicataGate oxideengineeringOptoelectronicsField-effect transistorElectrical and Electronic Engineeringbusiness

description

Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices.

yearjournalcountryeditionlanguage
2013-11-21
10.1149/2.007401sslhttp://hdl.handle.net/10447/89588