Identifying the domain-wall spin structure in antiferromagnetic NiO/Pt

Electrically tunable long-distance transport in crystalline antiferromagnetic iron oxide

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is to develop beyond-Moore, low-dissipation technology devices, recently demonstrating long-distance transport of spin signals across ferromagnetic insulators1. Antiferromagnetically ordered materials, the most common class of magnetic materials, have several crucial advantages over ferromagnetic systems2. Antiferromagnets exhibit no net magnetic moment, rendering them stable and impervious to external fields. Additionally, they can be operated at THz frequencies3. Although their properties bode well for spin transport4–7, previous indirect observations indicate…

Electrical detection of the spin reorientation transition in antiferromagnetic Tm Fe O 3 thin films by spin Hall magnetoresistance

Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction …