0000000001056741
AUTHOR
G.e. Thompson
showing 5 related works from this author
Growth and Characterization of Anodic Films on Al-Nb Alloys
2006
Abstract The anodizing behaviours of sputtering-deposited aluminium, niobium and Al-Nb alloys, containing 0.4, 7.5, 21, 40 and 55 at.% niobium, have been examined in 0.1 M ammonium pentaborate electrolyte with interest in the morphology, structure and electronic properties of the anodic oxides. Transmission electron microscopy revealed amorphous oxides, containing units of Nb2O5 and Al2O3, with formation ratios intermediate between those of anodic alumina and anodic niobia. Photocurrent spectroscopy provided increased understanding of the electronic properties of the anodic films, suggesting the formation of “mixed oxides” with insulating behaviours. The estimated band gap values are correl…
Effect of Composition on the Photoelectrochemical Behavior of Anodic Oxides on Binary Aluminum Alloys
2006
The photoelectrochemical behavior of anodic films on Al alloys, containing titanium, tantalum, and tungsten (valve metals), has been studied as a function of alloy composition and anodizing conditions. Photocurrent spectroscopy has been used to get information on bandgap and the flatband potential values of different mixed oxides. Both insulator-like and semiconducting behavior has been observed for anodic oxides grown on Al-W and Al-Ti alloys dependent on alloy initial composition. Optical bandgap values, E opt g , of different oxides are in accordance with predictions based on the correlation between E opt g and the difference of electronegativities of the oxide constituents, indicating p…
Formation of anodic films on sputtering-deposited Al–Hf alloys
2009
Abstract The growth of barrier-type anodic films at high efficiency on a range of sputtering-deposited Al–Hf alloys, containing from 1 to 95 at.% Hf, has been investigated in ammonium pentaborate electrolyte. The alloys encompassed nanocrystalline and amorphous structures, the latter being produced for alloys containing from 26 to 61 at.% Hf. Except at the highest hafnium content, the films were amorphous and contained units of HfO 2 and Al 2 O 3 distributed relatively uniformly through the film thickness. Boron species were confined to outer regions of the films. The boron distributions suggest that the cation transport number decreases progressively with increasing hafnium concentration i…
Photocurrent spectroscopy study of passive films on hafnium and hafnium–tungsten sputtered alloys
2003
Abstract Anodic and air-formed films on sputtered Hf and W–Hf alloys of different composition have been investigated by Rutherford back scattering, photocurrent spectroscopy (PCS) and transmission electron microscopy (TEM) techniques. In alkaline solutions the PCS data suggest the formation on Hf metal of a duplex layer with anodic hafnia covered by an external layer of composition close to HfO(OH) 2 . This last compound is also present on Hf air-formed films. In acidic solutions the initial oxy-hydroxide film disappears at high anodising potentials ( V f >10 V). In the case of W–Hf alloys films of different composition and semiconducting behaviour are formed by air exposure or by anodising…
Anodizing of aluminium and AA 2024-T3 alloy in chromic acid: Effects of sulphate on film growth
2017
Chromic acid anodizing is important for the corrosion protection of aerospace aluminium alloys. Previous study has demonstrated that SO42 − impurity in the chromic acid affects the film growth on aluminium at a voltage of 100 V. The present work further investigates aluminium and extends the study to industrial anodizing conditions (Bengough-Stuart (B-S) process) and to the AA 2024-T3 alloy. It is shown that SO42 − concentrations between ~ 38–300 ppm reduce the film growth rate for aluminium anodized at 100 V in comparison with an electrolyte than contains ≤ 1.5 ppm SO42 −, whereas ~ 1500–3000 ppm SO42 have an opposite effect and lead to an unstable pore diameter. Under the B-S process, the…