0000000001087914
AUTHOR
Daniel Granados
showing 7 related works from this author
Temperature dependent optical properties of stacked InGaAs/GaAs quantum rings
2008
4 páginas, 3 figuras, 2 tablas.-- MADICA 2006 Conference, Fifth Maghreb-Europe Meeting on Materials and their Applicatons for Devices and Physical, Chemical and Biological Sensors
Continuum and discrete excitation spectrum of single quantum rings
2005
Photoluminescence and excitation of the photoluminescence spectroscopy has been performed in single InGaAs self-assembled quantum rings embedded in a field effect structure device. To determine their electronic structure, bias-dependent optical transitions have been analyzed both, for individual quantum rings, and for the averaged ensemble. Our results are compared with a theoretical model, and also with results reported by other authors studying similar nanostructures.
Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields
2008
6 páginas, 3 figuras.-- Proceedings of the 7th International Conference on Physics of Light-Matter Coupling in Nanostructures.
Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings
2006
3 páginas, 3 figuras.
Oscillator strength reduction induced by external electric fields in self-assembled quantum dots and rings
2007
We have carried out continuous wave and time resolved photoluminescence experiments in self-assembled In(Ga)As quantum dots and quantum rings embedded in field effect structure devices. In both kinds of nanostructures, we find a noticeable increase of the exciton radiative lifetime with the external voltage bias that must be attributed to the field-induced polarizability of the confined electron hole pair. The interplay between the exciton radiative recombination and the electronic carrier tunneling in the presence of a stationary electric field is therefore investigated and compared with a numerical calculation based on the effective mass approximation.
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
Optimal coupling of HoW$_{10}$ molecular magnets to superconducting circuits near spin clock transitions
2019
A central goal in quantum technologies is to maximize $G$T$_{2}$, where $G$ stands for the coupling of a qubit to control and readout signals and T$_{2}$ is the qubit's coherence time. This is challenging, as increasing $G$ (e.g. by coupling the qubit more strongly to external stimuli) often leads to deleterious effects on T$_{2}$. Here, we study the coupling of pure and magnetically diluted crystals of HoW$_{10}$ magnetic clusters to microwave superconducting coplanar waveguides. Absorption lines give a broadband picture of the magnetic energy level scheme and, in particular, confirm the existence of level anticrossings at equidistant magnetic fields determined by the combination of crysta…