0000000001122613
AUTHOR
A. V. Prokofiev
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
Target thickness dependence of the Be(p,xn) neutron energy spectrum
We report on the current status of the analysis of an experiment performed at The Svedberg Laboratory, with the aim of investigating the produced neutron field by Be(p,xn) converters of three different thicknesses with a 30 MeV proton beam. The neutron energy spectra were measured with the Time of Flight technique using a BC-501 liquid scintillator with good n-γ Pulse Shape Discrimination properties, while the detected events were recorded simultaneously by two Data AcQuisition systems. In this paper, we present the experimental setup, the analysis technique and some preliminary results. AlFONS
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…