0000000001274355
AUTHOR
Yana Suchikova
showing 7 related works from this author
Ab-Initio Calculations of Oxygen Vacancy in Ga2O3 Crystals
2021
The research has been funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540). J. Purans and A.I.Popov acknowledge the ERAF project 1.1.1.1/20/A/057 “Functional Ultrawide Bandgap Gallium Oxide and Zinc Gallate Thin Films and Novel Deposition Technologies”. The Institute of Solid State Physics, University of Latvia (Latvia) as the Centre of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD01-2016-2017-Teaming Phase2 under grant agreement No. 739508, project CAMART2.
Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells
2021
This paper discusses and demonstrates the usefulness and prospects of using textured layers of indium phosphide as a material for space solar cells. Such designs improve the performance of the photovoltaic converter by increasing the effective area and surface roughness. Thus, it minimizes the background reflectivity of the surface. Textured layers on the InP surface were obtained by electrochemical etching using a bromous acid solution.
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
2021
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure
2021
This research was funded by the Science Committee of the Ministry of Education and Science of the Republic of Kazakhstan (Grant No. AP08856540) as well as by the Latvian research council via the Latvian National Research Program under the topic ?High-Energy Physics and Accelerator Technologies?, Agreement No: VPP-IZM-CERN-2020/1-0002 for A.I. Popov. In addition, J. Purans is grateful to the ERAF project 1.1.1.1/20/A/057 while A. Platonenko was supported by Latvian Research Council No. LZP-2018/1-0214. The authors thank A. Lushchik and M. Lushchik for many useful discussions. The research was (partly) performed in the Institute of Solid State Physics, University of Latvia ISSP UL. ISSP UL as…
Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching
2021
The article analyzes the morphological characteristics of a porous GaP surface layer formed on the surface of monocrystalline gallium phosphide by electrochemical etching. The correlations between the etching time and the appropriate size, shape and density of pores have been established and studied in detail.
Nanostructure Formation on ZnSe Crystal Surface by Electrochemical Etching
2021
The article describes a simple method for nanostructuring the surface of monocrystalline zinc selenide. It is shown that the traditional electrochemical etching of n-ZnSe (111) samples in a concentrated solution of nitric acid leads to the appearance of massive etching pits and small pores on the surface. The dynamics of the process and stages of crystal dissolution has been studied. It is assumed that the porous zinc selenide obtained in this way can be used in optoelectronic structures, as well as as buffer layers for growing zinc oxide.
Synthesis of porous indium phosphide with nickel oxide crystallites on the surface
2022
Y. Suchikova, S. Kovachov, I. Bohdanov, І. Bardus show their appreciation to the Ministry of Education and Science of Ukraine for its support, in particular: grant 0122U000129 “Search for Optimal Conditions for the Synthesis of Nanostructures on the Surface of Semiconductors A3B5, A2B6 and Silicon for Photonics and Solar Energy,” and grant 0121U109426 “Theoretical and Methodological Principles of Systemic Fundamentalization of Intended Specialist Training in the Field of Nanophase Materials Science for Productive Professional Activity”.