6533b833fe1ef96bd129c0a8

RESEARCH PRODUCT

Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching

Andriy LazarenkoYana SuchikovaAnatoli I. PopovIhor BohdanovA. B. UsseinovAlma Dauletbekova

subject

Monocrystalline siliconchemistry.chemical_compoundMorphology (linguistics)Materials sciencechemistryEtching (microfabrication)Gallium phosphidechemistry.chemical_elementSurface layerGalliumComposite materialPorositySingle crystal

description

The article analyzes the morphological characteristics of a porous GaP surface layer formed on the surface of monocrystalline gallium phosphide by electrochemical etching. The correlations between the etching time and the appropriate size, shape and density of pores have been established and studied in detail.

https://doi.org/10.1109/nap51885.2021.9568561