6533b833fe1ef96bd129c0a8
RESEARCH PRODUCT
Morphology Study of the Porosity of the GaP Surface Layer Formed on the Surface of a Single Crystal by Electrochemical Etching
Andriy LazarenkoYana SuchikovaAnatoli I. PopovIhor BohdanovA. B. UsseinovAlma Dauletbekovasubject
Monocrystalline siliconchemistry.chemical_compoundMorphology (linguistics)Materials sciencechemistryEtching (microfabrication)Gallium phosphidechemistry.chemical_elementSurface layerGalliumComposite materialPorositySingle crystaldescription
The article analyzes the morphological characteristics of a porous GaP surface layer formed on the surface of monocrystalline gallium phosphide by electrochemical etching. The correlations between the etching time and the appropriate size, shape and density of pores have been established and studied in detail.
year | journal | country | edition | language |
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2021-09-05 | 2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP) |