0000000001332235
AUTHOR
C. Graceffa
ELECTRON SPIN RELAXATION PROCESS IN SILICON CRYSTALS
Recently, electrical injection of spin polarization in n-type and p-type silicon has been experimentally carried out up to room-temperature. Despite of these preliminary but promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on the phonon-induced spin depolarization process in silicon structures, in a wide range of values of temperature, doping concentration and amplitude of external fields, is still in a developing stage. In order to elucidate the electron transport and spin dynamics of conduction electrons in lightly doped n-type Si crystals we have performed semiclassical multiparticle Monte Carlo simulations and numeric…
Phonon-induced spin relaxation of conduction electrons in silicon crystals
Experimental works managing electrical injection of spin polarization in n-type and p-type silicon have been recently carried out up to room-temperature. In spite of these promising experimental results, a comprehensive theoretical framework concerning the influence of transport conditions on phonon-induced electron spin depolarization in silicon structures, in a wide range of values of lattice temperature, doping concentration and amplitude of external fields, is still at a developing stage. In order to investigate the spin transport of conduction electrons in lightly doped n-type Si crystals, a set of semiclassical multiparticle Monte Carlo simulations has been carried out. The mean spin …
Phonon-induced spin depolarization of conduction electrons in silicon crystals
In last decade the process of spin relaxation of conduction electrons in semiconductor structures has been widely investigated, in order to use spin polarization as information carrier [1]. However, each initial non-equilibrium orientation decays over time during the transport. Thus, to make feasible the implementation of spin-based electronic devices, the features of spin relaxation at relatively high temperatures, jointly with the influence of transport conditions, should be fully understood [1]. Electrical injection of spin polarization in silicon structures up to room temperature has been experimentally carried out [2]. Despite these promising experimental results, a comprehensive theor…