6533b7d1fe1ef96bd125cc3f
RESEARCH PRODUCT
Ultraviolet-induced paramagnetic centers and absorption changes in singlemode Ge-doped optical fibers
Fabrizio MessinaAziz BoukenterK. MedjahdiMarco CannasYoucef Ouerdanesubject
Optical fiberMaterials sciencePhotoluminescence060.2290 160.4670 160.4760 300.1030 300.2140 300.6370 300.636002 engineering and technologymedicine.disease_cause01 natural sciences7. Clean energyAbsorptionMECHANISMSlaw.inventionEmissionParamagnetismOpticslawIonization0103 physical sciencesmedicineSILICA010306 general physicsSpectroscopyAbsorption (electromagnetic radiation)defectsESR[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]business.industryDopingGEO2-SIO2 GLASSESPHOTOSENSITIVITY021001 nanoscience & nanotechnologyAtomic and Molecular Physics and OpticsIRRADIATIONFibersDEFECT CENTERSSIO2 GLASSLUMINESCENCEKRF EXCIMER-LASER0210 nano-technologybusinessUltravioletGENERATIONdescription
We investigated the laser-energy-density dependence of absorption changes and paramagnetic centers induced by a cw Ar+ laser operating at 5.1 eV, in both unloaded and H-2-loaded single mode Ge-doped optical fibers. The induced absorption is measured in the blue and near ultraviolet spectral range by using the 3.1 eV photoluminescence, ascribed to Ge lone pair center (GLPC), as an in situ probe source. We find that the Ge (1) center (GeO4-) is induced upon UV exposure by electron trapping on GeO4 precursors, where the free electrons are most likely produced by ionization of GLPC. Ge (1) is responsible of optical transmission loss of the fiber in the investigated range. Hydrogen loading strongly influences the generation efficiency of the several observed paramagnetic defects, leading in particular to passivation of radiation-induced Ge (2) centers. (c) 2006 Optical Society of America
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2009-06-12 | Optics Express |