6533b7d1fe1ef96bd125d96f

RESEARCH PRODUCT

Ionizing radiation effects on Non Volatile Read Only Memory cells

Salvatore LombardoPaolo FinocchiaroSebania LibertinoFabio PrincipatoYakov RoizinCalogero PaceD. CorsoFelix PalumboM. Lisiansky

subject

Nuclear and High Energy PhysicsPhotonMaterials sciencebusiness.industrynitride read-only memories (NROM)Nitrideradiation hardnessFlash memoriesFlash memoryIonizing radiationThreshold voltageIonoxide/nitride/oxide (ONO)Terms—Flash memories nitride read-only memories (NROM) oxide/nitride/oxide (ONO) radiation hardness.Nuclear Energy and EngineeringOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardening

description

Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.

yearjournalcountryeditionlanguage
2012-12-01
10.1109/tns.2012.2219071http://www.cnr.it/prodotto/i/219351