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RESEARCH PRODUCT
Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer
Candid ReigIván Mora-seróJ PerazaV. MuñozN.v. SochinskiiN.v. Sochinskiisubject
DiffractionScanning electron microscopeChemistrybusiness.industryMetals and AlloysAnalytical chemistrySurfaces and InterfacesEpitaxyCadmium telluride photovoltaicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsMetalTetragonal crystal systemOpticsvisual_artMaterials Chemistryvisual_art.visual_art_mediumCrystallitebusinessLayer (electronics)description
Abstract Vapor phase epitaxy (VPE) of Hg1−xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1−xCdxI2 layers were grown using a (Hg1−yCdy)1−z(I2)z polycrystalline source, with a composition in the range of y=0.1–0.5 and z=0.5–0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg1−xCdxI2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg1−xCdxI2 layers with the composition x in the range from approximately 0 (HgI2 tetragonal structure) to 1 (CdI2 hexagonal structure).
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-01-01 | Thin Solid Films |