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RESEARCH PRODUCT
Potential and limitations of CsBi3I10 as a photovoltaic material
Francisco PalazonChris DreessenFerdinand C. GrozemaHenk J. BolinkPaz Sebastia-lunaMaría C. Gélvez-ruedaMichele Sessolosubject
PhotoluminescenceMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryBand gapDoping02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology7. Clean energy01 natural sciences0104 chemical sciencesSemiconductorVacuum depositionPhotovoltaicsOptoelectronicsGeneral Materials ScienceThermal stabilityThin film0210 nano-technologybusinessMaterialsdescription
Herein we demonstrate the dry synthesis of CsBi3I10 both as a free-standing material and in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis time-resolved microwave conductivity. Further developments should focus on understanding and overcoming the current limitations in charge mobility, possibly by compositional tuning through doping and/or alloying, as well as optimizing the thin film morphology which may be another limiting factor. Perovskite Thin-film Photovoltaics (PERTPV) REFERENCIA: 763977 Hetero-structures for Efficient Luminescent Devices (HELD) REFERENCIA: 834431
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2020-01-01 |