6533b7d6fe1ef96bd1265ab2

RESEARCH PRODUCT

Application of enthalpy model for floating zone silicon crystal growth

Janis VirbulisA. KrauzeKristaps Bergfelds

subject

010302 applied physicsMaterials scienceTriple pointPhysics::OpticsCrystal growth02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesMolecular physicsInorganic ChemistryCrystalMonocrystalline siliconCrystallographyCondensed Matter::Superconductivity0103 physical sciencesMaterials ChemistryLaser-heated pedestal growthCrystalliteGrowth rate0210 nano-technologySeed crystal

description

Abstract A 2D simplified crystal growth model based on the enthalpy method and coupled with a low-frequency harmonic electromagnetic model is developed to simulate the silicon crystal growth near the external triple point (ETP) and crystal melting on the open melting front of a polycrystalline feed rod in FZ crystal growth systems. Simulations of the crystal growth near the ETP show significant influence of the inhomogeneities of the EM power distribution on the crystal growth rate for a 4 in floating zone (FZ) system. The generated growth rate fluctuations are shown to be larger in the system with higher crystal pull rate. Simulations of crystal melting on the open melting front of the polycrystalline rod show the development of melt-filled grooves at the open melting front surface. The distance between the grooves is shown to grow with the increase of the skin-layer depth in the solid material.

yearjournalcountryeditionlanguage
2017-09-01Journal of Crystal Growth
https://doi.org/10.1016/j.jcrysgro.2016.12.053