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RESEARCH PRODUCT
Electron beam induced optical and electronical properties of SiO 2
T. BarfelsAnatoly N. TrukhinA. Von CzarnowskiH.-j. Fittingsubject
Materials scienceSiliconMechanical Engineeringchemistry.chemical_elementCathodoluminescenceCondensed Matter PhysicsSecondary electronsField electron emissionchemistryMechanics of MaterialsElectron excitationSecondary emissionGeneral Materials ScienceAtomic physicsLuminescenceExoelectron emissiondescription
Abstract Ionizing radiation in dielectric and optically transparent silica as well as thin SiO 2 layers produces defect luminescence as well as charge storage. A comparison of different excitation–relaxation processes like cathodoluminescence, charge injection and trapping, secondary electron field emission, and exoelectron emission leads to a generally similar excitation dose behaviour described by an electron beam saturation dose of 0.01–0.1 C/cm 2 . This suggests a correlation of these four electron excitation mechanisms likely related to the same kind of defect in glassy SiO 2 , the 2-fold-coordinated silicon Si: centre with typical electronic singlet–singlet and singlet–triplet transitions according the Skuja model.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2000-02-01 | Materials Science and Engineering: B |