0000000000034439
AUTHOR
H.-j. Fitting
Defect Luminescence of LiBaF3 Perovskites
Blue and red luminescence of undoped LiBaF3 crystals was studied. A broad, isotropic photoluminescence band centered at 410 nm can be excited by 210 nm — 275 nm light in as grown crystals. After X-irradiation at RT a new narrower, anisotropic luminescence band appears at 425 mn which has an additional excitation band at 290 nm. The X-irradiation also creates the F- type centres and anisotropic centres with an absorption band at 630 nm and a luminescence band at 700 nm. No F- centre luminescence is observed. All the other centres mentioned act as radiative recombination centers as well. It is speculated that the origin of the blue luminescence is due to oxygen defects and that the red lumine…
Colour centres in LiBaF3 crystals
Abstract The origin of the absorption bands in LiBaF 3 created by X-ray irradiation at RT has been investigated. It is found that three absorption bands at 270, 320 and 430 nm represent different electron transitions within a radiation defect effectively created in LiBaF 3 single crystals. Following the Mollwo–Ivey relation we discuss investigations of optical dichroism, magnetic optical dichroism, as well as the assumptions regarding the accumulation kinetics of these absorption bands, the F centre being the main radiation defect created by X-rays in undoped LiBaF 3 crystals at RT.
Electron beam induced optical and electronical properties of SiO 2
Abstract Ionizing radiation in dielectric and optically transparent silica as well as thin SiO 2 layers produces defect luminescence as well as charge storage. A comparison of different excitation–relaxation processes like cathodoluminescence, charge injection and trapping, secondary electron field emission, and exoelectron emission leads to a generally similar excitation dose behaviour described by an electron beam saturation dose of 0.01–0.1 C/cm 2 . This suggests a correlation of these four electron excitation mechanisms likely related to the same kind of defect in glassy SiO 2 , the 2-fold-coordinated silicon Si: centre with typical electronic singlet–singlet and singlet–triplet transit…
Luminescent properties of GaN films grown on porous silicon substrate
Abstract GaN films have been grown on porous silicon at high temperatures (800–1050 °C) by metal organic vapor phase epitaxy. The optical properties of GaN layers were investigated by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. PL spectra recorded at 5 K exhibit excitonic emissions around 3.36–3.501 eV and a broad yellow luminescence at 2.2 eV. CL analysis at different electron excitation conditions shows spatial non-uniformity in-depth of the yellow and the band-edge emissions. These bands of luminescence are broadened and red- or blue-shifted as the electron beam penetrates in the sample. These behaviors are explained by a change of the fundamental band gap due to re…
Luminescence and electron transport properties of GaN and AlN layers
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
Radiation induced defects in SiO 2
The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV). Especially the latter ones are produced under irradiation, but from existing precursors assumed as silicon related oxygen deficient centers (SiODC). Therefore, in order to prove these models we compare a direct oxygen implantation with a direct silicon implantation into SiO 2 layers. The main result is: implanting oxygen increases the red band R but does not affect the blue band B. Silicon surplus increases the amplitude of the blue (B) …
Radiation Defects in LiBaF3 Perovskites
We investigated the electron paramagnetic resonance (EPR), recombination afterglow, thermostimulated luminescence (TSL) and absorption of LiBaF3 perovskites crystals X-irradiated at 80 K The self-trapped hole centre VK(F2-) oriented along the [110] axis and electron F type (FA) centres are identified. X-irradiation at temperatures below 200 K results in creation of a long-term temperature-independent afterglow-tunnelling luminescence (TL), with main emission bands at 300, 370 nm and 430 nm. The short wavelength TL bands are associated with the tunnelling recombination of the F type centre with the VK centre. The thermal stability of VK centre is estimated to be about 130 K.
Self-trapped holes and recombination luminescence in LiBaF3 crystals
Abstract We investigated electron paramagnetic resonance (EPR) angular dependencies, recombination afterglow and thermostimulated luminescence of undoped LiBaF3 crystals, X-irradiated at low temperatures. EPR parameters of the F2− molecule oriented along the [1 1 0] direction have been obtained. Based on the value of the g-shift Δg=g⊥−gII=0.02, characteristic for the VK-centres in similar perovskites, we propose that we indeed observed the VK-centres, not the H-centres. X-irradiation below 170 K results in creation of a long-time temperature-independent afterglow due to the tunnelling recombination between close electron and hole centres. The F-type electron centres and the VK as well as pr…
Colour centres in LiBaF3
Abstract The X-ray-induced optical absorption (OA) and the spectra of magnetic circular dichroism (MCD) followed by optically detected EPR (ODEPR) have been investigated in undoped LiBaF3 crystals. According to ODEPR, the absorption bands in the spectral region 470–770 nm correspond to the F-type centres, whereas the absorption band at 420 nm is assigned to the hole centres. The redistribution of electrons to the thermal more stable F-type centres indicates that all types of colour centres are annealed in the course of the thermal release of electrons from F-type centres, accompanied by a thermostimulated luminescence.
Degradation features of BaF2 scintillators under radiation and magnetic fields
Degradation features of BaF2 scintillators have been examined in combined γ- and n-radiation and strong magnetic fields. Created radiation defects have been investigated by optical magnetooptical, and ODMR techniques. It is shown that the magnetic field has no selective action on defects of different structure. The magnetic field slightly diminishes the efficiency of creation of impurity color centers. The decrease of the creation rate at a magnetic field of B = 1 T does not exceed 10%. The nature of these radiation defects in BaF2 scintillators obtained by different technologies is discussed. Degradations-Eigenschaften von BaF2-Szintillatoren wurden in kombinierter γ- und Neutronen-Strahlu…
Defect Luminescence Study in Tetragonal GeO2 Crystals
The perovskite-or rutile-like GeO2 crystals were grown by the “top-seed” method from a fused germanium dioxide solution with sodium bicarbonate. The luminescence was studied under cathode-, x-ray, and photo-excitation. There are two luminescence bands at 550 nm and 400 nm with slow (100–200 µs) and fast (<20 ns) decay, respectively. The luminescence can be excited either by intra-center and electron-hole recombination processes. An analogous luminescence, however with strong non-exponential decay, is observed in glassy materials obtained from the frozen solution. Sodium-germanate glasses melted under oxygen deficient condition also possess similar luminescence, therefore the luminescence is…
Cathodoluminescence decay kinetics in Ge+, Si+, O+ implanted SiO2 layers
Abstract Cathodoluminescence spectral shapes and respective band decay times show no similarity between luminescence centers in different crystal and amorphous modifications of SiO2 and GeO2. On the other hand, the additionally produced red luminescence centers (650 nm) by oxygen implantation into SiO2 layers are of the same nature as in stoichiometric SiO2 and are attributed to the non-bridging oxygen hole center (NBOHC). On the other hand, the elevated blue luminescence (460 nm) in Si implanted SiO2 belongs to the silicon related oxygen deficient center (SiODC) as in stoichiometric layers also. Ge implantation into SiO2 and thermal post-annealing leads to a huge violet luminescence (400 n…