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RESEARCH PRODUCT
Crystal shape 2D modeling for transient CZ silicon crystal growth
T.-h. SchröckA. KrauzeKristaps BergfeldsA. MuiznieksA. Sabanskissubject
Materials scienceSiliconComputer simulationRotational symmetryPhysics::Opticschemistry.chemical_elementCrystal growthMechanicsCondensed Matter PhysicsFinite element methodPower (physics)Inorganic ChemistryCrystalCrystallographychemistryCondensed Matter::SuperconductivityMaterials ChemistryTransient (oscillation)description
Abstract A non-stationary axisymmetric model of Czochralski silicon single crystal growth is presented. The model describes transient behavior of crystal–melt, melt–gas and crystal–gas interfaces in connection with PID-based control of crystal diameter by changing crystal pulling velocity and heater power. To calculate significant crystal shape changes, unstructured finite element mesh is used in crystal and melt together with automatic element size control. Heater temperature changes are modeled with a simplified integral model. A numerical simulation example of start cone growth is given.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2013-08-01 | Journal of Crystal Growth |