6533b7ddfe1ef96bd12750ca
RESEARCH PRODUCT
Physical modelling of the melt flow during large-diameter silicon single crystal growth
Erich Dr TomzigA. FeodorovL. GorbunovWilfried Von Dr AmmonJanis VirbulisA. Pedchenkosubject
SiliconChemistryPrandtl numberGrashof numberMineralogychemistry.chemical_elementMechanicsCondensed Matter Physicslaw.inventionPhysics::Fluid DynamicsInorganic Chemistrysymbols.namesakeFlow velocitylawHeat transferMaterials ChemistrysymbolsCrystallizationMelt flow indexEutectic systemdescription
Abstract The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling liquid, employing actual criteria of the real process (Prandtl, Reynolds, Grashof numbers, etc.) and geometric similarity. A multi-channel measuring system was used to collect and process the temperature and flow velocity data. The investigations were focused on the study of heat transfer, in particular, the instability of the “cold zone” of the melt at the crystallization front.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2003-09-01 | Journal of Crystal Growth |