0000000000400400
AUTHOR
Erich Dr Tomzig
Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements
This paper presents a comparison between numerically calculated and measured temperature distributions in turbulent flow in a laboratory model for a CZ large silicon single crystal industrial growth system with a horizontal DC magnetic field. The laboratory model consists of an electrically heated 20” crucible with low-temperature InGaSn melt, a water-cooled metallic crystal model, and a magnet system creating a horizontal magnetic field in the range 0–. Distributions of time-averaged temperature values in various cross sections in the melt are obtained from measurements by a multichannel thermocouple system. A 3D numerical model for the scalar potential induced in the melt by the velocity …
Physical modelling of the melt flow during large-diameter silicon single crystal growth
Abstract The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling liquid, employing actual criteria of the real process (Prandtl, Reynolds, Grashof numbers, etc.) and geometric similarity. A multi-channel measuring system was used to collect and process the temperature and flow velocity data. The investigations were focused on the study of heat transfer, in particular, the instability of the “cold zone” of the melt at the crystallization front.
Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility
The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutec…
Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth
Abstract The increase of diameter in the silicon single crystal growth from 200 to 300 mm for industrial application, and to 400 or 450 mm for research, respectively, has triggered off the development of numerous new technologies like crystal-growth-supporting systems, low-power hot zones, high strength of static magnetic fields and new quartzglas qualities. At Wacker Siltronic, new kinds of magnetic fields have been developed for 300 mm CZ growth. In this paper, the results of dynamic and combined (static and alternating) magnetic fields are discussed. Instead of buoyancy-driven convection, a magnetic-field-controlled melt flow has been obtained in large melt volumes. The crucible wall tem…
Prediction of the growth interface shape in industrial 300mm CZ Si crystal growth
Abstract A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300 mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300 mm Si CZ growth experiments with 200 kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Neverthele…