6533b82bfe1ef96bd128d5b3
RESEARCH PRODUCT
Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth
L. GorbunovJanis VirbulisWilfried Von AmmonYuri GelfgatErich Dr Tomzigsubject
ConvectionRange (particle radiation)Materials scienceSiliconCondensed matter physicsMechanical Engineeringchemistry.chemical_elementCrucibleCondensed Matter PhysicsCorrosionMagnetic fieldNuclear magnetic resonancechemistryMechanics of MaterialsGeneral Materials ScienceMagnetic pressureMelt flow indexdescription
Abstract The increase of diameter in the silicon single crystal growth from 200 to 300 mm for industrial application, and to 400 or 450 mm for research, respectively, has triggered off the development of numerous new technologies like crystal-growth-supporting systems, low-power hot zones, high strength of static magnetic fields and new quartzglas qualities. At Wacker Siltronic, new kinds of magnetic fields have been developed for 300 mm CZ growth. In this paper, the results of dynamic and combined (static and alternating) magnetic fields are discussed. Instead of buoyancy-driven convection, a magnetic-field-controlled melt flow has been obtained in large melt volumes. The crucible wall temperature and, in turn, the quartzglas corrosion has been reduced. Furthermore, the application of the magnetic fields allows the control of oxygen in a wide range.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2002-08-01 | Materials Science in Semiconductor Processing |