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RESEARCH PRODUCT
Resonant Raman scattering in self-assembledGaN∕AlNquantum dots
Núria GarroBruno DaudinAna CrosJosé M. LlorensAndrés CantareroEva MonroyE. SarigiannidouNoelle GogneauAlberto García-cristóbalsubject
PhysicsCondensed matter physicsDielectricCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsBlueshiftCondensed Matter::Materials Sciencesymbols.namesakeQuantum dotsymbolsPolarAnisotropyRaman spectroscopyRaman scatteringExcitationdescription
Self-assembled $\mathrm{Ga}\mathrm{N}∕\mathrm{Al}\mathrm{N}$ quantum dots have been investigated by means of Raman scattering. A resonant enhancement of the Raman peaks has been observed when the excitation is tuned above the GaN band-gap energy. The polar mode nature, either quasiconfined or interfacial, has been assigned after comparing with the polar optical modes of spheroidal dots calculated within the framework of the anisotropic dielectric continuum model. The built-in strain of the GaN dots induced a substantial blueshift of the nonpolar ${E}_{2H}$ Raman mode frequency. A theoretical model that analyzes the three-dimensional strain distribution in the quantum dots has been employed for estimating the strain contribution to the frequency shifts of both nonpolar and polar optical modes.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-08-02 | Physical Review B |