6533b81ffe1ef96bd1277dc8

RESEARCH PRODUCT

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

Päivi TörmäMarina Y. ZavodchikovaJ. Jussi ToppariAndreas JohanssonAlbert G. NasibulinMarcus RinkiöEsko I. Kauppinen

subject

Materials scienceFabricationTransistorContact resistanceNanotechnology85.30.TvDielectricCarbon nanotubeCondensed Matter Physics85.35.Kt73.40.SxElectronic Optical and Magnetic Materialslaw.inventionCarbon nanotube field-effect transistorlaw73.63.FgElectrodeField-effect transistor73.23.-b

description

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

yearjournalcountryeditionlanguage
2007-11-01physica status solidi (b)
https://doi.org/10.1002/pssb.200776187