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RESEARCH PRODUCT
Ab initio calculations of charged point defects in GaN
I. TaleChih-chung YangAndris GulansRobert A. Evarestovsubject
Materials scienceCondensed matter physicsDopantAb initio quantum chemistry methodsLinear combination of atomic orbitalsSupercell (crystal)Density functional theoryCharge (physics)Electronic structureCrystallographic defectdescription
The Generalized Gradient Approximation (GGA) of a Density Functional Theory (DFT) in LCAO basis is used to determine electronic structure of charged point defects in hexagonal GaN. Impurities of MgGa, ZnGa, SiN and CN (the most common dopants) were considered for charge states 0, ±1, –2. The vacancies of VGa and VN were considered for charge states 0 and 0, ±1, ±2 respectively. The defects in consideration are compared from the point of view of the one-electron states localization. All the calculations were performed for a supercell containing 96 atoms. The divergence due to periodically repeated charges has been eliminated by the use of a uniform background charge of an opposite sign. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2005-01-01 | physica status solidi (c) |