6533b821fe1ef96bd127acb9
RESEARCH PRODUCT
Direct imaging of current-induced antiferromagnetic switching revealing a pure thermomagnetoelastic switching mechanism in NiO
Felix SchreiberC. SchmittHendrik MeerJairo SinovaMathias KläuiLorenzo BaldratiEiji SaitohEiji SaitohRafael RamosOlena Gomonaysubject
Mechanism (engineering)Materials scienceMagnetic domainSpintronicsCondensed matter physicsNon-blocking I/OAntiferromagnetismTorqueCondensed Matter::Strongly Correlated ElectronsDirect imagingCurrent (fluid)description
We unambiguously identify the origin of the current-induced magnetic switching of insulating antiferromagnet/heavy metal bilayers. Previously, different reorientations of the Neel order for the same current direction were reported for different device geometries and different switching mechanisms were proposed. Here, we combine concurrent electrical readout and optical imaging of the switching of antiferromagnetic domains with simulations of the current-induced temperature and strain gradients. By comparing the switching in specially engineered NiO/Pt device and pulsing geometries, we can rule out spin-orbit torque based mechanisms and identify a thermomagnetoelastic mechanism to dominate the switching of antiferromagnetic domains, reconciling previous reports.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2021-08-01 | Spintronics XIV |