6533b824fe1ef96bd1280075
RESEARCH PRODUCT
Strain induced renormalization of transport properties in UPt3 thin films
Martin JourdanStefan ReberJan HessertMichael HuthPhilipp GegenwartH. Adriansubject
Lateral strainMaterials scienceCondensed matter physicsGeneral Physics and Astronomychemistry.chemical_elementUraniumEpitaxyRenormalizationchemistryElectrical resistivity and conductivitySputteringLattice (order)ddc:530Thin filmdescription
The growth of sputter deposited UPt3 thin films on Al2O3 (1012), LaAlO3 (111) and SrTiO3 (111) was investigated. We found strongly 0001-textured growth of UPt3 in a small compositional range of 23–25% uranium content. For Al2O3-and LaAlO3-substrates no in-plane order could be observed whereas epitaxial growth was initiated on SrTiO3 (111): The growth can be identified as Vollmer-Weber like resulting in the formation of large lateral strain as a consequence of the growth mode and a lattice misfit of −4.3% between UPt3 (0001) and SrTiO3 (111). Strong deviations from the typical heavy-fermion characteristics in electronic transport properties like resistivity, magnetoresitivity and Hall-effect are attributed to changes of the hybridization between the localized 5f-and itinerant states.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1996-02-01 | Czechoslovak Journal of Physics |