6533b825fe1ef96bd12827a6
RESEARCH PRODUCT
Electron scattering mechanisms inn-type indium selenide
A. ChevyAlfredo SeguraF. PomerW. KrauseAndrés Cantarerosubject
Electron mobilityMaterials scienceMagnetoresistanceCondensed matter physicsPhononScatteringchemistry.chemical_elementCondensed Matter::Mesoscopic Systems and Quantum Hall EffectMagnetic fieldCondensed Matter::Materials Sciencechemistry.chemical_compoundchemistrySelenideCondensed Matter::Strongly Correlated ElectronsAtomic physicsElectron scatteringIndiumdescription
Electron scattering mechanisms in $n$-type indium selenide are investigated by means of the temperature dependence (4-500 K) of Hall mobility and the magnetic field dependence of Hall and magnetoresistance coefficients. The Schmid model for homopolar optical-phonon scattering can explain the temperature dependence of electron mobility above 40 K. The electron-phonon coupling constant is determined, ${g}^{2}=0.054$. The optical phonon involved in the process is identified as the ${A}_{1}^{\ensuremath{'}}$ phonon with energy 14.3 meV. The magnetic field dependence of Hall and magnetoresistance coefficients is discussed in terms of the Jones-Zener expansion.
year | journal | country | edition | language |
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1984-05-15 | Physical Review B |