6533b827fe1ef96bd1286631
RESEARCH PRODUCT
Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
Pirouz SohiNicolas GrandjeanJean-françois CarlinMauro MoscaMauro MoscaYao Chensubject
Materials Chemistry2506 Metals and AlloysMaterials scienceHydrogenchemistry.chemical_element02 engineering and technologyChemical vapor depositionCondensed Matter Physic01 natural sciencesSettore ING-INF/01 - Elettronicalaw.inventionElectrical resistivity and conductivitylaw0103 physical sciencesMaterials ChemistryElectrical and Electronic EngineeringBlue lightDiode010302 applied physicsmetalorganic chemical vapor depositionbusiness.industryElectronic Optical and Magnetic Material021001 nanoscience & nanotechnologyCondensed Matter Physicsblue light-emitting diodeElectronic Optical and Magnetic MaterialsBand bendingchemistryOptoelectronicsQuantum efficiency0210 nano-technologybusinessLight-emitting diodeGaN tunnel junctiondescription
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n ++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (<800 °C) was used to hinder Mg-passivation by hydrogen in the p ++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-11-22 |