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RESEARCH PRODUCT
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Corinna MartinellaMarianne Etzelmüller BathenArto JavanainenUlrike Grossnersubject
säteilyfysiikkaMechanics of MaterialspuolijohteetMechanical Engineeringionisoiva säteilytransistoritGeneral Materials ScienceCondensed Matter Physicselektroniikkakomponentitdescription
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.
year | journal | country | edition | language |
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2023-05-31 |