6533b828fe1ef96bd1288ece

RESEARCH PRODUCT

Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs

Corinna MartinellaMarianne Etzelmüller BathenArto JavanainenUlrike Grossner

subject

säteilyfysiikkaMechanics of MaterialspuolijohteetMechanical Engineeringionisoiva säteilytransistoritGeneral Materials ScienceCondensed Matter Physicselektroniikkakomponentit

description

Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples. Common luminescence peaks of defect centers localized in the thermal-SiO2 are identified, together with peaks at the characteristic wavelength of extended defects.

http://urn.fi/URN:NBN:fi:jyu-202307064411