6533b82afe1ef96bd128cac0

RESEARCH PRODUCT

<title>Photo-induced structural changes in near-surface layers of chalcogenide semiconductors</title>

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Photoinduced structural changes in near-surface layers of amorphous As-Se and As-S films have been investigated using the microhardness method. Microhardness via indentation depth data for as-deposited, illuminated and aged in ambient atmosphere films is presented. The results obtained show that photoinduced increase in microhardness of surface layers up to approximately 1 - 1.5 micrometer are more pronounced in comparison with deeper layers. Increase in microhardness of the investigated films under exposure to atmosphere was also observed. Atmosphere-induced effect was more pronounced in the case of As-S films. Photo- and atmosphere-induced effects in the near-surface layers were found to be competitive. As a result, increase of the photoinduced effect in the microhardness of As-Se films and its decrease in the case of As-S films with decreasing indentation depth was observed. It was found that thermal stability of photo- and atmosphere-induced structural changes in near-surface layers are higher compared to volume ones.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.