6533b82cfe1ef96bd129003a

RESEARCH PRODUCT

Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution

Benito AlénJorge M. GarciaJuan P. Martínez-pastorLuisa GonzálezDavid FusterYolanda GonzálezMaría Ujué González

subject

Single quantum wiresWork (thermodynamics)Materials scienceNanostructureReflection high-energy electron diffractionCondensed matter physicsMechanical EngineeringQuantum wireBioengineeringGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter::Materials ScienceCrystallographyReflection (mathematics)Electron diffractionMechanics of MaterialsGeneral Materials ScienceElectrical and Electronic EngineeringMolecular beam epitaxyQuantumMolecular beam epitaxy

description

6 páginas, 5 figuras. In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θRθR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of InAs/InP self-assembled single quantum wires. The authors gratefully acknowledge financial support by the Spanish MEC and CAM through project nos. TEC-2005-05781-C03-01, NAN2004-09109-C04-01 and S-505/ESP/-000200, and by the European Commission through SANDIE Network of Excellence (No. NMP4-CT-2004-500101). Peer reviewed

yearjournalcountryeditionlanguage
2007-01-03Nanotechnology
https://doi.org/10.1088/0957-4484/18/3/035604