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RESEARCH PRODUCT

<title>Luminescence of intrinsic defects in LiBaF<formula><inf><roman>3</roman></inf></formula></title>

subject

description

A wide emission band in the region of 425 nm is observed in all the examined crystals at photo and ionising irradiation. Maximum of the complex luminescence band is observed at 410 nm at 350 K and at 450 nm at 85 K. The shift of the peak of the band envelope towards shorter wavelengths as the temperature increases is related to thermal dependence of the intensity of elementary components of the luminescence band. The authors suggest that the complex luminescence band arises from electronic excitations at "antisite" defects, i.e., defects caused by stoichiometric deviations, when a portion of Li+ cations (cations of one type of the LiBaF3 crystal lattice) occupy sites of Ba2+ cations (cations of another type) and vice versa.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.