0000000000034441
AUTHOR
A. Veispals
showing 20 related works from this author
Defect Luminescence of LiBaF3 Perovskites
2000
Blue and red luminescence of undoped LiBaF3 crystals was studied. A broad, isotropic photoluminescence band centered at 410 nm can be excited by 210 nm — 275 nm light in as grown crystals. After X-irradiation at RT a new narrower, anisotropic luminescence band appears at 425 mn which has an additional excitation band at 290 nm. The X-irradiation also creates the F- type centres and anisotropic centres with an absorption band at 630 nm and a luminescence band at 700 nm. No F- centre luminescence is observed. All the other centres mentioned act as radiative recombination centers as well. It is speculated that the origin of the blue luminescence is due to oxygen defects and that the red lumine…
Infrared and Raman spectroscopy of WO3 and CdWO4
2001
Abstract Infrared reflection and Raman spectroscopy have been applied to study the vibrational modes of tungsten trioxide (WO 3 ) and cadmium tungstate (CdWO 4 ). Kramers–Kronig relations are employed to yield the refractive index as well as TO and LO functions of these materials at frequencies from 50 to 1200 cm −1 . The symmetry of the vibrations of CdWO 4 is reported.
Colour centres in LiBaF3 crystals
1998
Abstract The origin of the absorption bands in LiBaF 3 created by X-ray irradiation at RT has been investigated. It is found that three absorption bands at 270, 320 and 430 nm represent different electron transitions within a radiation defect effectively created in LiBaF 3 single crystals. Following the Mollwo–Ivey relation we discuss investigations of optical dichroism, magnetic optical dichroism, as well as the assumptions regarding the accumulation kinetics of these absorption bands, the F centre being the main radiation defect created by X-rays in undoped LiBaF 3 crystals at RT.
Ion diffusion-controlled processes in fluoride crystals
2001
Ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF 2 , BaF 2 and LiBaF 3 crystals (X-ray irradiated at 290 K) have been investigated by means of ionic conductivity and the correlated ionic thermally stimulated depolarisation current (TSDC), and radiation-induced optical absorption band thermal bleaching techniques at 290-650 K. It was found that under a DC field fluorides store large ionic space-charge. In CaF 2 , BaF 2 and LiBaF 3 , by using the ionic TSDC technique we were able to detect a series of the interstitial anion and/or anion vacancy delocalisation stages in the extrinsic ionic conductivity region. At least 4-6 wide and overlapping ionic TSD…
Luminescence of Ce‐doped borate‐oxyfluoride glass ceramics
2007
In the present work we studied the possibility to obtain oxyfluoride glass ceramics based on a lithium and potassium borate glasses with addition of fluorides. Lithium-borate glasses without lanthanum fluoride are transparent up to 275 nm. In samples with LaF3 doped with Ce-activator, an additional absorption at about 300 nm and intense photoluminescence could be observed. Ce-doped potassium-borate glass with addition of fluorides LaF3, LiF and GdF3 was milky and not transparent, an intense photoluminescence has been observed, X-ray diffraction measurements showed a presence of well-pronounced crystalline phases of LiF as well as of GdBO3. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Luminescence and electron transport properties of GaN and AlN layers
2001
Abstract The transport properties of free charge carriers, photo- and cathodo-luminescence (CV) in GaN and AlN films obtained by MOCVD technique on sapphire and Si substrates, are investigated. The concentration of free charge carriers in GaN is of order 10 17 – 10 19 cm −3 whereas AlN thin films are insulating. The Hall mobility of electrons are 80– 140 cm 2 / V s ). In undoped GaN films the spectral composition of CL is close to photoluminescence (PL) when excited in the region of band–band transitions. The decay time constant of the 3.44 eV UV emission attributed to the bound exciton is considerably less than 1 ns , whereas the 3.26 eV violet (VI) band shows a slow hyperbolical decay ove…
<title>Annealing of radiation defects in x-irradiated LiBaF<formula><inf><roman>3</roman></inf></formula>&l…
2003
Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the…
<title>Luminescence of intrinsic defects in LiBaF<formula><inf><roman>3</roman></inf></formula></title&g…
2003
A wide emission band in the region of 425 nm is observed in all the examined crystals at photo and ionising irradiation. Maximum of the complex luminescence band is observed at 410 nm at 350 K and at 450 nm at 85 K. The shift of the peak of the band envelope towards shorter wavelengths as the temperature increases is related to thermal dependence of the intensity of elementary components of the luminescence band. The authors suggest that the complex luminescence band arises from electronic excitations at "antisite" defects, i.e., defects caused by stoichiometric deviations, when a portion of Li+ cations (cations of one type of the LiBaF3 crystal lattice) occupy sites of Ba2+ cations (cation…
Luminescence of intrinsic defects in YAG polycrystalline powder
1997
In the present work we have investigated luminescence properties of the fine, well-crystallized undoped YAG polycrystalline powders and thermochemically treated YAG polycrystalline powders. Presented work give evidence of significant role of 'antisite' defects (AD), i.e., where some portion of one type of cations (Y 3+ ) occupy another cations (Al 3+ Oh ) sites and vice versa in YAG structure, on the creation and structure of luminescence centers in complex multi-component oxides.
Radiation Defects in LiBaF3 Perovskites
2000
We investigated the electron paramagnetic resonance (EPR), recombination afterglow, thermostimulated luminescence (TSL) and absorption of LiBaF3 perovskites crystals X-irradiated at 80 K The self-trapped hole centre VK(F2-) oriented along the [110] axis and electron F type (FA) centres are identified. X-irradiation at temperatures below 200 K results in creation of a long-term temperature-independent afterglow-tunnelling luminescence (TL), with main emission bands at 300, 370 nm and 430 nm. The short wavelength TL bands are associated with the tunnelling recombination of the F type centre with the VK centre. The thermal stability of VK centre is estimated to be about 130 K.
Structure and luminescence of GaN layers
2001
Abstract GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.
Thermal relaxation of colour centres in LiBaF3crystals
2001
Abstract Processes in LiBaF3 crystals caused by the thermal decay of F-type centres created by X-irradiation at room temperature have been examined. It is shown that the thermal decay of F-type centres results in the formation of two kinds of electron centres peaking at 630 nm and 740 nm differing in thermal stability. Weak TSL intensity, accompanying the decay of F-centres, also observed as well as the low value of the process activation energy suggest that due to the presence of moving anion vacancies a random walk of the F-centres occur. We propose that in course of the random walk of the F-centres both the aggregate F-centres are created and the annihilation with some complementary radi…
Self-trapped holes and recombination luminescence in LiBaF3 crystals
2001
Abstract We investigated electron paramagnetic resonance (EPR) angular dependencies, recombination afterglow and thermostimulated luminescence of undoped LiBaF3 crystals, X-irradiated at low temperatures. EPR parameters of the F2− molecule oriented along the [1 1 0] direction have been obtained. Based on the value of the g-shift Δg=g⊥−gII=0.02, characteristic for the VK-centres in similar perovskites, we propose that we indeed observed the VK-centres, not the H-centres. X-irradiation below 170 K results in creation of a long-time temperature-independent afterglow due to the tunnelling recombination between close electron and hole centres. The F-type electron centres and the VK as well as pr…
Annealing of Radiation Defects in X-Irradiated LiBaF3
2002
AbstractResults of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type …
Colour centres in LiBaF3
1997
Abstract The X-ray-induced optical absorption (OA) and the spectra of magnetic circular dichroism (MCD) followed by optically detected EPR (ODEPR) have been investigated in undoped LiBaF3 crystals. According to ODEPR, the absorption bands in the spectral region 470–770 nm correspond to the F-type centres, whereas the absorption band at 420 nm is assigned to the hole centres. The redistribution of electrons to the thermal more stable F-type centres indicates that all types of colour centres are annealed in the course of the thermal release of electrons from F-type centres, accompanied by a thermostimulated luminescence.
Photo- and thermostimulated processes in α-Al2O3
1995
Abstract We reported on the recombination processes determined by the release of electrons from defects connected with the dosimetric 430 K thermostimulated luminescence (TSL) peak as well as with the 260 K TSL peak. These TSL peaks appear in thermochemically reduced α-Al 2 O 3 crystals containing hydrogen and emission of these TSL peaks corresponds to luminescence of the F-center. The X-ray exposure or UV excitation in the absorption band of F-centers at 6.0 eV of reduced α-Al 2 O 3 crystals doped with acceptor impurities results in the appearance of a broad anisotropic complex absorption band in the spectral region 2.5–3.5 eV and in the appearance of a predominant TSL peak at 430 K. Above…
Degradation features of BaF2 scintillators under radiation and magnetic fields
1996
Degradation features of BaF2 scintillators have been examined in combined γ- and n-radiation and strong magnetic fields. Created radiation defects have been investigated by optical magnetooptical, and ODMR techniques. It is shown that the magnetic field has no selective action on defects of different structure. The magnetic field slightly diminishes the efficiency of creation of impurity color centers. The decrease of the creation rate at a magnetic field of B = 1 T does not exceed 10%. The nature of these radiation defects in BaF2 scintillators obtained by different technologies is discussed. Degradations-Eigenschaften von BaF2-Szintillatoren wurden in kombinierter γ- und Neutronen-Strahlu…
Thermally Stimulated Ionic and Electronic Processes and Radiation-Induced Defect Annealing in LiBaF3 Crystals
2000
The electronic, ionic and ion-diffusion controlled thermally stimulated relaxation (TSR) processes in X-ray irradiated (at 80 K or 290 K) nominally pure LiBaF3 fluoroperovskite crystals have been investigated in the 90–550 K range by means of the ionic conductivity, ionic thermally stimulated depolarization current (TSDC), as well as the thermally stimulated current (TSC), thermally stimulated luminescence (TSL) and the X-ray induced optical absorption spectra thermal bleaching techniques. The role of the thermoactivated ionic and ionic-electronic processes in the TSR (thermal bleaching, TSC and TSL) of X-ray irradiated crystals is studied above 250 K. The TSL efficiency (ratio TSL/TSC) ver…
Defect Luminescence Study in Tetragonal GeO2 Crystals
2000
The perovskite-or rutile-like GeO2 crystals were grown by the “top-seed” method from a fused germanium dioxide solution with sodium bicarbonate. The luminescence was studied under cathode-, x-ray, and photo-excitation. There are two luminescence bands at 550 nm and 400 nm with slow (100–200 µs) and fast (<20 ns) decay, respectively. The luminescence can be excited either by intra-center and electron-hole recombination processes. An analogous luminescence, however with strong non-exponential decay, is observed in glassy materials obtained from the frozen solution. Sodium-germanate glasses melted under oxygen deficient condition also possess similar luminescence, therefore the luminescence is…
EPR of radiation defects in LiBaF 3 crystals
2002
EPR spectra of LiBaF 3 crystals have been investigated after X-irradiation at RT. A spectrum consisting of approximately 35 nearly equidistant EPR lines has a strong angular dependence on the line intensities. The spectrum is caused by a hyperfine interaction (hfs) of a spin S=1/2 with neighbouring groups of nuclei. The observed large number of hfs lines required Li nuclei being in the first shell and fluorine nuclei in the more distant second shell. We analysed the spectrum in the F-centre model, taking reduced hfs values of the F-centre in LiF and found qualitative explanation of the number of hfs lines. The angular dependence of the line intensities could be explained by an anisotropy of…