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RESEARCH PRODUCT
Structure and luminescence of GaN layers
A. VeispalsJ. JansonsT. BarfelsHans-joachim FittingA. Von CzarnowskiH WulffI. Talesubject
ChemistryExcitonAnalytical chemistryGeneral Physics and AstronomyInfrared spectroscopyCathodoluminescenceSurfaces and InterfacesGeneral ChemistryCrystal structureCondensed Matter PhysicsSurfaces Coatings and FilmsCrystalliteMetalorganic vapour phase epitaxyLuminescenceQuartzdescription
Abstract GaN films grown on 〈1 1 1〉 Si substrate by means of low pressure MOCVD technique in a horizontal flow quartz reactor are characterized by different thin layer analysis methods. The polycrystalline hexagonal structure of the GaN layers has been checked by means of grazing incidence X-ray diffractometry and IR spectroscopy. Cathodoluminescence (CL) spectra and their time kinetics are studied. The mean decay time of the 3.44 eV UV bound exciton transition is below 1 ns, whereas the 3.26 eV violet band shows a slow hyperbolical decay over about 1 μs. A third yellow band appears at 2.12 eV due to transitions via localized states.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2001-07-01 | Applied Surface Science |