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RESEARCH PRODUCT

Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

G. CannellaCosimo GerardiFabio PrincipatoM. FotiA. BattagliaN. CostaC. TringaliS. Lombardo

subject

Amorphous siliconMaterials sciencePhysics and Astronomy (miscellaneous)Siliconbusiness.industrySurface plasmonchemistry.chemical_elementhydrogenated amorphous silicon (a-Si:H) solar cellsSubstrate (electronics)Amorphous solidchemistry.chemical_compoundchemistrysurface plasmon polaritonOptoelectronicsbusinessShort circuitPlasmonTransparent conducting film

description

We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.

yearjournalcountryeditionlanguage
2012-09-17
10.1063/1.4753936http://hdl.handle.net/10447/64558