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RESEARCH PRODUCT
Solar blind AlGaN photodetectors with a very high spectral selectivity
Mauro MoscaJean-luc ReverchonJean-yves DubozP. G. VerlyAmélie DussaigneNicolas GrandjeanR. H. Simpsonsubject
Interference filterMaterials scienceFLAME DETECTIONbusiness.industryDetectorPhotodetectorsPHOTODIODESPhotodetectorSchottky diodeultraviolet photodetectorsHeterojunctionGallium nitrideSemiconductor deviceCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsPhotodiodelaw.inventionOpticslawOptoelectronicsDETECTIVITYbusinessInstrumentationMolecular beam epitaxydescription
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-01-01 |