Search results for "Photodetectors"
showing 10 items of 21 documents
Internal photoemission in solar blind AlGaN Schottky barrier photodiodes
2005
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…
Infrared detection in multifunctional graphene-based transistors
2016
In the last years great attention has been paid to graphene-based devices for optoelectronic applications such as photodetection. In this work, we report on Graphene Field Effect Transistors (GFETs) photoelectrical response due to the photo-transistor effect. Photoelectrical measurements were performed using a 1.55 μm erbium fiber laser. Optical measurements as a function of both the incident laser power and the DC bias of the fabricated devices have been carried out and show that photocurrent increases with the power of the IR beam illuminating the sample.
Photocurrent generation in Graphene Field Effect Transistors (GFETs)
2016
In this work, we focused on the study of Graphene Field Effect Transistors (GFETs) photoelectrical response due to the combination of photovoltaic and photo-thermoelectric effects. The technological steps for the transistors fabrication together with their electro-optic response will be presented. Measurements were performed by using a 405 nm laser diode with AM modulation at 1.33 KHz shined onto the sample under test. GFETs electrical output signals were measured by using a lock-in amplifier synchronized to the same reference frequency of the laser driver. This gave us the possibility to evaluate the optical characteristics as a function of both the incident laser power and the static pola…
Photoelectrical response of Graphene Field Effect Transistors (GFETs)
2016
In this work, we present Graphene Field Effect Transistors (GFETs) with photoelectrical response due to the photovoltaiceffect. Our final aim is to use a GFET to down convert an optical to a radiofrequency signal. The technological steps used for the devices fabrication as well as the photoelectrical characterization will be reported. Photoelectrical measurements were performed by using a 405 nm laser diode source, whose output beam was pulse amplitude-modulated at 1.33 kHz by means of a laser driver. The electrical signal out of the GFETs (in a common source amplifier configuration) was measured using a lock-in amplifier synchronized to the same reference frequency of the laser driver. Thi…
Solar blind AlGaN photodetectors with a very high spectral selectivity
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), and better than 5 x 10(4), measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
Génération et détection d'électrons chauds dans des dispositifs plasmoniques
2021
Hot carrier-based devices are quite promissing for ultrafast photodetection and toset off enhanced physicochemical reactions. Controlling their generation at the nanoscale within plasmonic devices is a key for the future development of hybrid hot carriers technologies. Indeed, Surface PlasmonPolaritons (SPPs) can be exploited to confine light and enhance the number of excited hot carriers. We aim at studying the excitation and dynamics of hot carriers, enhanced by plasmonics, with two different approaches.In a first approach, we aim at controlling the delocalized generation of hot carriers by a propagative SPP. A plasmonic waveguide with a grating coupler is employed. Hot electrons are indi…
Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons
2018
Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark cur…
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
2004
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
Ultra-broad spectral photo-response in FePS3 air-stable devices
2021
Van der Waals materials with narrow energy gaps and efficient response over a broadband optical spectral range are key to widen the energy window of nanoscale optoelectronic devices. Here, we characterize FePS as an appealing narrow-gap p-type semiconductor with an efficient broadband photo-response, a high refractive index, and a remarkable resilience against air and light exposure. To enable fast prototyping, we provide a straightforward guideline to determine the thickness of few-layered FePS nanosheets extracted from the optical transmission characteristics of several flakes. The analysis of the electrical photo-response of FePS devices as a function of the excitation energy confirms a …
Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode
2016
International audience; An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider r…