6533b85bfe1ef96bd12bacb3
RESEARCH PRODUCT
Effects of the Buffer Layers on the Performances of (Al,Ga)N Ultraviolet Photodetectors
Mauro MoscaJean-yves DubozFranck OmnèsJean-luc Reverchonsubject
Materials scienceFabricationbusiness.industryWide-bandgap semiconductorPhotodetectorsGeneral Physics and AstronomyPhotodetectorultraviolet photodetectorsChemical vapor depositionGallium nitrideEpitaxymedicine.disease_causeSettore ING-INF/01 - ElettronicaBuffer (optical fiber)medicineOptoelectronicsbusinessLayer (electronics)Ultravioletdescription
The fabrication of (Al,Ga)N-based metal–semiconductor–metal (MSM) photovoltaic detectors requires the growth of high-quality (Al,Ga)N films. Inserting a low-temperature deposited buffer layer enables the growth of an epitaxial layer with a reduced density of defects. Two structures using GaN and AlN buffer layers have been deposited by low-pressure metalorganic chemical vapor deposition and used to fabricate MSM interdigitated detectors. The devices have been characterized to investigate the effects of the buffer layers on the detector performances.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2004-04-15 |