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RESEARCH PRODUCT
Growth characteristics of sputter-deposited thin films
J. HessertH. AdrianPhilipp GegenwartS ReberClemens HeskeP SchicketanzMichael Huthsubject
SuperconductivityRange (particle radiation)Materials scienceScanning electron microscopeMetallurgyAnalytical chemistrySubstrate (electronics)Condensed Matter PhysicsCondensed Matter::Materials ScienceElectrical resistivity and conductivitySputteringSapphireGeneral Materials ScienceThin filmdescription
Thin films of the heavy-fermion superconductor were deposited on various substrate materials in various orientations by means of a quasi-multilayer sputter process. Strongly (0001)-textured growth of the hexagonal compound was found for a uranium content in the range of 23% to 28% on sapphire and with perfect in-plane order on the latter substrate material. Atomic force microscopy and scanning electron microscopy revealed a Vollmer - Weber-like growth mode resulting in the development of large compressive strain in films on . As a result the electronic transport properties - in particular the temperature dependence of the resistivity - were strongly renormalized. Strong deviations from the typical heavy-fermion characteristics known from bulk samples were found in films on with residual resistance ratios up to 930 and a significantly reduced superconducting transition temperature of 130 mK.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1996-11-04 | Journal of Physics: Condensed Matter |