6533b82ffe1ef96bd1296474

RESEARCH PRODUCT

Near-band luminescence of CdZnTe detector crystals

Larisa GrigorjevaV IvanovD. MillersL Aleksejeva

subject

Materials sciencePhysics::Instrumentation and DetectorsCondensed Matter::OtherPhononExcitonKineticsDetectorAnalytical chemistryPhysics::OpticsAcceptorCharacterization (materials science)Condensed Matter::Materials ScienceHigh Energy Physics::ExperimentLuminescenceCdznte detector

description

The near-band luminescence due to both neutral donor and neutral acceptor bound excitons (D0 Ex), (A0Ex) and its phonon replicas as well as luminescence of donor-acceptor pair (DAP) and deep energy level due to undefined defect state (A band) were studied in CZT detector crystals. The near-band luminescence correlation with detector characteristics was analyzed and the results could be applied for nondestructive detector material selection. It is obtained that some parameters such as a presence and intensity of A and DAP luminescence bands, the decay kinetics in A0Ex-1LO and DAP luminescence bands, are most important characteristics for detector material characterization.

yearjournalcountryeditionlanguage
2012-08-20IOP Conference Series: Materials Science and Engineering
https://doi.org/10.1088/1757-899x/38/1/012037